品名 | 敘述 | 詢價 |
---|---|---|
Al Etch Series | IC, Logic, Etchant Al Etch series are functional chemicals designed specifically for etching of Al(alloy), Mo(Nb)/Al(Nd), Mo(Nb)/Al(Nd)/Mo(Nb). The Al Etch series can be tailored to meet the specific needs of end users. | |
Aluminum Etchants | IC, Logic, Etchant Al Etch series are functional chemicals designed specifically for etching of Al(alloy), Mo(Nb)/Al(Nd), Mo(Nb)/Al(Nd)/Mo(Nb). The Al Etch series can be tailored to meet the specific needs of end users. | |
BOE & BHF Series | IC, Logic, Memory, Etchant BOE and BHF are HF and NH4F based formulated chemicals designed specifically for etching of SiO2 and SiN. BHF series etchants contain surfactant, which enhances wettability and achieves etching uniformity. | |
Oxide Etchants | IC, Logic, Memory, Etchant BOE and BHF are HF and NH4F based formulated chemicals designed specifically for etching of SiO2 and SiN. BHF series etchants contain surfactant, which enhances wettability and achieves etching uniformity. | |
HSE Series | IC, Logic, 7nm, 5nm HSE series etchants are formulated chemicals designed specifically for high selective etching for different materials, such as SiO2/SiN, TiSi/TiN and Si orientation<111>/<100>. | |
High Selective Etchants | IC, Logic, 7nm, 5nm HSE series etchants are formulated chemicals designed specifically for high selective etching for different materials, such as SiO2/SiN, TiSi/TiN and Si orientation<111>/<100>. | |
Poly Series | IC, logic, legacy, advanced process Poly series etchants are formulated chemicals designed specifically for isotropic etching of Si. A wide variety of recipes are available to meet the demands of customers. | |
Polysilicon Etchants | IC, logic, legacy, advanced process Poly series etchants are formulated chemicals designed specifically for isotropic etching of Si. A wide variety of recipes are available to meet the demands of customers. | |
MAE Series Etchants | MAE series etchants are formulated chemicals designed specifically for etching specific metal layers ranging from Cu, Co and W with high selectivity to other metal layers. |